Peer Reviewed Publications and Patents:

Publications:

Please, send an email to Dr. Schlaf for a PDF-reprint if you cannot access a particular journal.

*P. Carreras, S. Gutmann, A. Antony, J. Bertomeu and R. Schlaf: "The Electronic Structure of Co-Sputtered Zinc Indium Tin Oxide Thin Films", Journal of Applied Physics 110 pp.073711 (2011).
*M. A. Wolak, S. Gutmann, H. J. Helmrich, R. Vosloo, M. M. Beerbom, E. Wierzbinski, D. H. Waldeck, S. Bezer, C. Achim, A. Balaeff, D. N. Beratan and R. Schlaf: "Electronic Structure of Self-Assembled Peptide Nucleic Acid Thin Films", J. Phys. Chem. C 115, pp. 17123–17135, (2011).
*S. Gutmann, M. A. Wolak, M. Conrad, M. M. Beerbom and R. Schlaf: "Electronic structure of indium tin oxide/nanocrystalline TiO2 interfaces as used in dye-sensitized solar cell devices", Journal of Applied Physics 109, Art.No.113719 (2011).
*M. A. Wolak, S. Gutmann, M. Conrad, M. M. Beerbom, C. Ferekides and R. Schlaf: "Charge Injection Barriers and Chemical Interaction at the CdTe/NbSe2 Interface", Journal of Applied Physics 109, Art.No.023701 (2011).
*S. Gutmann, M. A. Wolak, M. Conrad, M. M. Beerbom and R. Schlaf: "Effect of UV and X-ray Radiation on the Work Function of TiO2 Surfaces", Journal of Applied Physics 107 Art.No.103705 (2010).
* J. Magulick, M. M. Beerbom and R. Schlaf: "Polarization Lowering of Charge Injection Barriers at a Ribonucleic Acid/Au Interface", Journal of Applied Physics 104, Art.No. 123701 (2008).
*J. E. Lyon, M. K. Rayan, M. M. Beerbom and R. Schlaf: "Electronic Structure of the Indium Tin Oxide / Nanocrystalline Anatase (TiO2) / Ruthenium-Dye Interfaces in Dye-Sensitized Solar Cells", Journal of Applied Physics 104 Art.No.: 073714 (2008).
*J. Magulick, M. M. Beerbom and R. Schlaf: "Investigation of Adenine, Uracil, and Ribose Phosphate Thin Films Prepared by Electrospray In-Vacuum Deposition Using Photoemission Spectroscopy", Thin Solid Films 516 (9), pp.2396-2400 (2008).
*Y. Yi, J. E. Lyon, M. M. Beerbom and R. Schlaf: "Orbital alignment at poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene interfaces", Journal of Applied Physics 102, Art.No. 023710 (2007).
*J. Magulick, M. M. Beerbom and R. Schlaf: "Comparison of ribonucleic acid homopolymer ionization energies and charge injection barriers", Journal of Physical Chemistry B 110 (32), pp.15973-15981 (2006).
*J. Magulick, M. M. Beerbom, B. Lagel and R. Schlaf: "Ionization energy and electronic structure of polycytidine", Journal of Physical Chemistry B 110 (6), pp.2692-2699 (2006).
*J. E. Lyon, A. J. Cascio, M. M. Beerbom, R. Schlaf, Y. Zhu and S. A. Jenekhe: "Photoemission study of the poly(3-hexylthiophene)/Au interface", Applied Physics Letters 88 (22), pp.- (2006).
*A. J. Cascio, J. E. Lyon, M. M. Beerbom, R. Schlaf, Y. Zhu and S. A. Jenekhe: "Investigation of a polythiophene interface using photoemission spectroscopy in combination with electrospray thin-film deposition", Applied Physics Letters 88 (6), pp.- (2006).
*M. M. Beerbom, B. Lagel, A. J. Cascio, B. V. Doran and R. Schlaf: "Direct comparison of photoemission spectroscopy and in situ Kelvin probe work function measurements on indium tin oxide films", Journal of Electron Spectroscopy and Related Phenomena 152 (1-2), pp.12-17 (2006).
*S. Mudhivarthi, P. B. Zantye, A. Kumar, A. Kumar, M. Beerbom and R. Schlaf: "Effect of Temperature on Tribological, Electrochemical, and Surface Properties during Copper CMP", Electrochemical and Solid-State Letters 8 (9), pp.G241-G245 (2005).
*B. Lagel, M. M. Beerbom, B. V. Doran, M. Lagel, A. Cascio and R. Schlaf: "Investigation of the poly[2-methoxy-5-(2 '-ethyl-hexyloxy)-1,4-phenylene vinylene]/indium tin oxide interface using photoemission spectroscopy", Journal of Applied Physics 98 (2), pp.- (2005).
*N. Dam, B. V. Doran, J. C. Braunagel and R. Schlaf: "Charge injection barriers at a ribonucleic acid/inorganic material contact determined by photoemission spectroscopy", Journal of Physical Chemistry B 109 (2), pp.748-756 (2005).
*N. Dam, M. M. Beerbom, J. C. Braunagel and R. Schlaf: "Photoelectron spectroscopic investigation of in-vacuum-prepared luminescent polymer thin films directly from solution", Journal of Applied Physics 97 (2), pp.- (2005).
*M. M. Beerbom, R. Gargagliano and R. Schlaf: "Determination of the electronic structure of self-assembled L-cysteine/Au interfaces using photoemission spectroscopy", Langmuir 21 (8), pp.3551-3558 (2005).
*M. A. Labrador, J. Wolan, G. Centeno, A. Kumar, G. Mullins and R. Schlaf: "A research initiative to close the gap between undergraduate and graduate school in engineering", Frontiers in Education, 2004. FIE 2004. 34th Annual (2004), pp.S1B/1-S1B/5 Vol. 3.
*B. Lagel, M. D. Ayala and R. Schlaf: "Kelvin probe force microscopy on corona charged oxidized semiconductor surfaces", Applied Physics Letters 85 (20), pp.4801-4803 (2004).
*M. M. Beerbom, Z. Bednarova, R. Gargagliano, Y. Emirov and R. Schlaf: "Band line-up at the 4H-SiC/Ni interface determined with photoemission spectroscopy", Applied Surface Science 236 (1-4), pp.208-216 (2004).
*J. Kohlscheen, Y. N. Emirov, M. M. Beerbom, J. T. Wolan, S. E. Saddow, G. Chung, M. F. MacMillan and R. Schlaf: "Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy", Journal of Applied Physics 94 (6), pp.3931-3938 (2003).
*J. T. Wolan, B. A. Grayson, J. Kohlscheen, Y. Emirov, R. Schlaf, W. Swartz and S. E. Saddow: "Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces", Journal of Electronic Materials 31 (5), pp.380-383 (2002).
*P. G. Schroeder, C. B. France, B. A. Parkinson and R. Schlaf: "Orbital alignment at p-sexiphenyl and coronene/layered materials interfaces measured with photoemission spectroscopy", Journal of Applied Physics 91 (11), pp.9095-9107 (2002).
*R. Schlaf, H. Murata and Z. H. Kafafi: "Work function measurements on indium tin oxide films", Journal of Electron Spectroscopy and Related Phenomena 120 (1-3), pp.149-154 (2001).
*R. Schlaf, C. D. Merritt, L. C. Picciolo and Z. H. Kafafi: "Determination of the orbital lineup at reactive organic semiconductor interfaces using photoemission spectroscopy", Journal of Applied Physics 90 (4), pp.1903-1910 (2001).
*P. G. Schroeder, M. W. Nelson, B. A. Parkinson and R. Schlaf: "Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2", Surface Science 459 (3), pp.349-364 (2000).
*R. Schlaf, P. G. Schroeder, M. W. Nelson, B. A. Parkinson, C. D. Merritt, L. A. Crisafulli, H. Murata and Z. H. Kafafi: "Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy", Surface Science 450 (1-2), pp.142-152 (2000).
*H. Kim, C. M. Gilmore, J. S. Horwitz, A. Pique, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi and D. B. Chrisey: "Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices", Applied Physics Letters 76 (3), pp.259-261 (2000).
*R. Schlaf, P. G. Schroeder, M. W. Nelson, B. A. Parkinson, P. A. Lee, K. W. Nebesny and N. R. Armstrong: "Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2", Journal of Applied Physics 86 (3), pp.1499-1509 (1999).
*R. Schlaf, C. Pettenkofer and W. Jaegermann: "Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy", Journal of Applied Physics 85 (9), pp.6550-6556 (1999).
*R. Schlaf, B. A. Parkinson, P. A. Lee, K. W. Nebesny and N. R. Armstrong: "Absence of final-state screening shifts in photoemission spectroscopy frontier orbital alignment measurements at organic/semiconductor interfaces", Surface Science 420 (1), pp.L122-L129 (1999).
*R. Schlaf, B. A. Parkinson, P. A. Lee, K. W. Nebesny and N. R. Armstrong: "HOMO/LUMO alignment at PTCDA/ZnPc and PTCDA/ClInPc heterointerfaces determined by combined UPS and XPS measurements", Journal of Physical Chemistry B 103 (15), pp.2984-2992 (1999).
*R. Schlaf, C. D. Merritt, L. A. Crisafulli and Z. H. Kafafi: "Organic semiconductor interfaces: Discrimination between charging and band bending related shifts in frontier orbital line-up measurements with photoemission spectroscopy", Journal of Applied Physics 86 (10), pp.5678-5686 (1999).
*R. Schlaf, O. Lang, C. Pettenkofer and W. Jaegermann: "Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule", Journal of Applied Physics 85 (5), pp.2732-2753 (1999).
*R. Schlaf, R. Hinogami, M. Fujitani, S. Yae and Y. Nakato: "Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy", Journal of Vacuum Science & Technology A 17 (1), pp.164-169 (1999).
*M. W. Nelson, P. G. Schroeder, R. Schlaf, B. A. Parkinson, C. W. Almgren and A. N. Erickson: "Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy", Applied Physics Letters 74 (10), pp.1421-1423 (1999).
*M. W. Nelson, P. G. Schroeder, R. Schlaf and B. A. Parkinson: "Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy", Electrochemical and Solid State Letters 2 (9), pp.475-477 (1999).
*M. W. Nelson, P. G. Schroeder, R. Schlaf and B. A. Parkinson: "Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases", Journal of Vacuum Science & Technology B 17 (4), pp.1354-1360 (1999).
*S. E. Shaheen, G. E. Jabbour, M. M. Morrell, Y. Kawabe, B. Kippelen, N. Peyghambarian, M. F. Nabor, R. Schlaf, E. A. Mash and N. R. Armstrong: "Bright blue organic light-emitting diode with improved color purity using a LiF/Al cathode", Journal of Applied Physics 84 (4), pp.2324-2327 (1998).
*G. A. Seryogin, S. A. Nikishin, H. Temkin, R. Schlaf, L. I. Sharp, Y. C. Wen, B. Parkinson, V. A. Elyukhin, Y. A. Kudriavtsev, A. M. Mintairov, N. N. Faleev and M. V. Baidakova: "Single phase ZnSnAs2 grown by molecular beam epitaxy", Journal of Vacuum Science & Technology B 16 (3), pp.1456-1458 (1998).
*R. Schlaf, P. G. Schroeder, M. W. Nelson, R. Stubner, S. Tiefenbacher, H. Jungblut and B. A. Parkinson: "Influence of electrostatic forces on the imaging process in scanning tunneling microscopy", Thin Solid Films 331 (1-2), pp.203-209 (1998).
*R. Schlaf, B. A. Parkinson, P. A. Lee, K. W. Nebesny, G. Jabbour, B. Kippelen, N. Peyghambarian and N. R. Armstrong: "Photoemission spectroscopy of LiF coated Al and Pt electrodes", Journal of Applied Physics 84 (12), pp.6729-6736 (1998).
*R. Schlaf, B. A. Parkinson, P. A. Lee, K. W. Nebesny and N. R. Armstrong: "Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined X-ray and ultraviolet photoemission measurements", Applied Physics Letters 73 (8), pp.1026-1028 (1998).
*A. Klein, Y. Tomm, R. Schlaf, C. Pettenkofer, W. Jaegermann, M. Lux-Steiner and E. Bucher: "Photovoltaic properties of WSe2 single-crystals studied by photoelectron spectroscopy", Solar Energy Materials and Solar Cells 51 (2), pp.181-191 (1998).
*A. Klein, O. Lang, R. Schlaf, C. Pettenkofer and W. Jaegermann: "Electronically decoupled films of InSe prepared by van der Waals epitaxy: Localized and delocalized valence states", Physical Review Letters 80 (2), pp.361-364 (1998).
*R. Schlaf, D. Louder, M. W. Nelson and B. A. Parkinson: "Influence of electrostatic forces on the investigation of dopant atoms in layered semiconductors by scanning tunneling microscopy/spectroscopy and atomic force microscopy", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 15 (3), pp.1466-1472 (1997).
*R. Schlaf, O. Lang, C. Pettenkofer, W. Jaegermann and N. R. Armstrong: "Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 15 (3), pp.1365-1370 (1997).
*R. Schlaf, N. R. Armstrong, B. A. Parkinson, C. Pettenkofer and W. Jaegermann: "Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes", Surface Science 385 (1), pp.1-14 (1997).
*A. Schmidt, R. Schlaf, D. Louder, L. K. Chau, S. Y. Chen, T. Fritz, M. F. Lawrence, B. A. Parkinson and N. R. Armstrong: "Epitaxial-Growth of the Ionic Polymer Fluoroaluminum Phthalocyanine on the Basal-Plane of Single-Crystal Tin Disulfide", Chemistry of Materials 7 (11), pp.2127-2135 (1995).
*R. Schlaf, D. Louder, O. Lang, C. Pettenkofer, W. Jaegermann, K. W. Nebesny, P. A. Lee, B. A. Parkinson and N. R. Armstrong: "Molecular-Beam Epitaxy Growth of Thin-Films of Sns2 and Snse2 on Cleaved Mica and the Basal Planes of Single-Crystal Layered Semiconductors - Reflection High-Energy Electron-Diffraction, Low-Energy-Electron Diffraction, Photoemission, and Scanning-Tunneling-Microscopy Atomic-Force Microscopy Characterization", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 13 (3), pp.1761-1767 (1995).
*O. Lang, A. Klein, R. Schlaf, T. Loher, C. Pettenkofer, W. Jaegermann and A. Chevy: "Inse/Gase Heterointerfaces Prepared by Van-Der-Waals Epitaxy", Journal of Crystal Growth 146 (1-4), pp.439-443 (1995).
*C. Hammond, A. Back, M. Lawrence, K. Nebesny, P. Lee, R. Schlaf and N. R. Armstrong: "Growth of Layered Semiconductors by Molecular-Beam Epitaxy - Formation and Characterization of Gase, Mose2, and Phthalocyanine Ultrathin Films on Sulfur-Passivated Gap(111)", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 13 (3), pp.1768-1775 (1995).
*R. Schlaf, S. Tiefenbacher, O. Lang, C. Pettenkofer and W. Jaegermann: "Van-Der-Waals Epitaxy of Thin Inse Films on Mote2", Surface Science 303 (1-2), pp.L343-L347 (1994).
*O. Lang, Y. Tomm, R. Schlaf, C. Pettenkofer and W. Jaegermann: "Single-Crystalline Gase/Wse2 Heterointerfaces Grown by Van-Der-Waals Epitaxy .2. Junction Characterization", Journal of Applied Physics 75 (12), pp.7814-7820 (1994).
*O. Lang, R. Schlaf, Y. Tomm, C. Pettenkofer and W. Jaegermann: "Single-Crystalline Gase/Wse2 Heterointerfaces Grown by Van-Der-Waals Epitaxy .1. Growth-Conditions", Journal of Applied Physics 75 (12), pp.7805-7813 (1994).
*R. Schlaf, A. Klein, C. Pettenkofer and W. Jaegermann: "Laterally Inhomogeneous Surface-Potential Distribution and Photovoltage at Clustered in/Wse2(0001) Interfaces", Physical Review B 48 (19), pp.14242-14252 (1993).
*A. Schellenberger, R. Schlaf, C. Pettenkofer and W. Jaegermann: "Xps and Sxps Studies on in-Situ Prepared Na/Inse Insertion Compounds", Solid State Ionics 66 (3-4), pp.307-312 (1993).
*A. Schellenberger, R. Schlaf, C. Pettenkofer and W. Jaegermann: "Synchrotron-Induced Surface-Photovoltage Saturation at Intercalated Na/Wse2 Interfaces", Physical Review B 45 (7), pp.3538-3545 (1992).
*A. Schellenberger, R. Schlaf, T. Mayer, E. Holubkrappe, C. Pettenkofer, W. Jaegermann, U. A. Ditzinger and H. Neddermeyer: "Na Adsorption on the Layered Semiconductors Sns2 and Wse2", Surface Science 241 (3), pp.L25-L29 (1991).

Patents:

*R. Schlaf, J. Kohlscheen and J. C. Braunagel: "Method for producing a three-dimensional macro-molecular structure", US Patent, US 6,881,950 (2005)
*R. Schlaf: "High aspect ratio tip atomic force microscopy cantilevers and method of manufacture", Patent, WO 2005059514 (2005)
*R. Schlaf, Z. F. Ren, J. G. Wen and D. L. Carnahan: "Method of producing a branched carbon nanotube for use with an atomic force microscope", Patent, 6,871,528 (2005)
*R. Schlaf: "Method of producing an integrated circuit with a carbon nanotube", Patent, 6,835,613 (2004)